The SI7850DP-T1-E3 from Vishay Siliconix is a high-performance 60V N-channel TrenchFET® power MOSFET designed for fast-switching power conversion applications. It combines low on-resistance, low gate charge, and a compact low-profile package, making it suitable for high-efficiency DC/DC converters and power switching circuits.
The device features a maximum RDS(on) of 22mΩ at VGS = 10V and 31mΩ at VGS = 4.5V, helping reduce conduction losses across a wide range of gate-drive conditions. Its typical total gate charge is approximately 18nC, supporting fast switching and reduced driver losses.
SI7850DP-T1-E3 supports a drain-source voltage of 60V and a continuous drain current of up to 10.3A under specified short-duration thermal conditions, while the steady-state current rating is approximately 6.2A at TA = 25°C. Pulsed drain current can reach 40A.
The device uses Vishay’s PowerPAK® SO-8 package, featuring a low profile of approximately 1.07mm and improved thermal performance compared with conventional SO-8 packages. It is optimized for PWM switching and is suitable for primary-side switching in 24V DC/DC converters, secondary synchronous rectification, power management modules, industrial electronics, and other compact power applications.
Key Features
- N-channel TrenchFET® power MOSFET
- Drain-source voltage VDS: 60V
- RDS(on): 22mΩ max @ VGS = 10V
- RDS(on): 31mΩ max @ VGS = 4.5V
- Typical total gate charge Qg: 18nC
- Continuous drain current: up to 10.3A under specified conditions
- Steady-state drain current: 6.2A @ TA = 25°C
- Pulsed drain current: 40A
- Gate-source voltage: ±20V
- Fast switching performance
- PWM optimized
- Low thermal resistance
- Low-profile package: approximately 1.07mm
- Package: PowerPAK® SO-8
- Mounting type: Surface Mount
- Lead-free version: SI7850DP-T1-E3
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