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STF15N95K5 STMicroelectronics 950V 12A 500mΩ N-Channel MDmesh K5 Power MOSFET TO-220FP

原价为:$4.60。当前价格为:$4.00。

STMicroelectronics STF15N95K5 is a 950V, 12A MDmesh K5 N-channel power MOSFET featuring 500mΩ maximum on-resistance, 30nC typical gate charge, and a fully insulated TO-220FP package.

剩余量: 库存 100000 件

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SKU: STF15N95K5 分类: 品牌:

The STF15N95K5 from STMicroelectronics is a high-voltage MDmesh K5 N-channel power MOSFET featuring a 950V drain-source breakdown voltage, a continuous drain current of 12A at a 25°C case temperature, and a pulsed drain current of up to 48A. Its proprietary vertical structure is designed to reduce on-resistance and gate charge for high-efficiency, high-power-density switching applications.

At VGS=10V and ID=6A, the device has a typical drain-source on-resistance of 410mΩ and a maximum value of 500mΩ. Typical total gate charge is 30nC, including 5nC gate-source charge and 22nC gate-drain charge, helping reduce gate-drive losses in switching converters. Its gate-threshold voltage ranges from 3V to 5V.

The STF15N95K5 is supplied in a fully insulated TO-220FP through-hole package with a maximum power dissipation of 30W, junction-to-case thermal resistance of 4.2°C/W, and 2.5kVrms insulation withstand voltage. It supports a junction-temperature range of -55°C to +150°C and features gate Zener protection, 100% avalanche testing, and a single-pulse avalanche-energy rating of 124mJ.

The device is supplied in tube packaging and is classified as an industrial-grade ECOPACK2 component. It is suitable for high-voltage power conversion, AC/DC and DC/DC supplies, power-factor-correction stages, adapters, and general power-switching circuits. Switching frequency, gate drive, thermal design, and safe operating area should be verified in the final application.

Key Specifications:

  • Manufacturer: STMicroelectronics
  • Manufacturer Part Number: STF15N95K5
  • Product Series: MDmesh K5
  • Device Type: N-Channel Power MOSFET
  • Drain-Source Breakdown Voltage: 950V
  • Continuous Drain Current: 12A at TC=25°C
  • Continuous Drain Current: 7.6A at TC=100°C
  • Pulsed Drain Current: 48A
  • Typical On-Resistance: 410mΩ
  • Maximum On-Resistance: 500mΩ
  • On-Resistance Test Conditions: VGS=10V, ID=6A
  • Gate-Source Voltage: ±30V
  • Gate-Threshold Voltage: 3V to 5V
  • Typical Total Gate Charge: 30nC
  • Typical Input Capacitance: 855pF
  • Single-Pulse Avalanche Energy: 124mJ
  • Maximum Power Dissipation: 30W
  • Insulation Withstand Voltage: 2.5kVrms
  • Junction-Temperature Range: -55°C to +150°C
  • Package: TO-220FP
  • Mounting Type: Through-Hole
  • Packaging: Tube
  • Environmental Grade: ECOPACK2

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