The Texas Instruments CSD17484F4 is an ultra-compact 30V N-channel FemtoFET™ power MOSFET designed for space-constrained load switching, battery-powered systems, and portable electronic applications. Featuring a maximum continuous drain current rating of 3A under specified thermal conditions, this device combines low on-resistance, ultra-low gate charge, and logic-level operation in a miniature 0402-size LGA package.
The CSD17484F4 provides a maximum drain-source on-resistance of 128mΩ at VGS = 4.5V and 160mΩ at VGS = 2.5V. Its low threshold voltage and efficient switching characteristics make it suitable for low-voltage load switching and microcontroller-controlled power management circuits. Actual current capability depends on PCB layout, thermal conditions, and device power dissipation.
Featuring a typical total gate charge of just 0.92nC at 4.5V, the device helps minimize gate-drive losses and supports fast switching performance. Its typical gate threshold voltage is 0.85V, while the integrated ESD protection diode provides protection rated above 4kV HBM and 2kV CDM.
The CSD17484F4 is housed in a miniature 3-terminal FemtoFET LGA package measuring only 1.0 × 0.6 × 0.2mm. With a footprint comparable to a 0402 passive component, it offers at least a 60% footprint reduction compared with conventional small-signal MOSFET solutions, according to TI.
The device features a maximum power dissipation rating of 500mW under specified PCB conditions and an operating junction temperature range of -55°C to +150°C. Its lead-free, halogen-free, and RoHS-compliant construction makes it suitable for high-density PCB designs and automated surface-mount assembly.
Key Specifications:
- Manufacturer: Texas Instruments (TI)
- Part Number: CSD17484F4
- Product Family: FemtoFET™ / NexFET™
- Product Type: N-Channel Power MOSFET
- Channel Configuration: Single N-Channel
- Operating Mode: Enhancement Mode
- Gate Drive Type: Logic Level
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 3A Maximum Rating
- Pulsed Drain Current (IDM): 18A (Specified Pulse Conditions)
- Maximum RDS(on): 128mΩ (VGS = 4.5V, ID = 0.5A)
- Maximum RDS(on): 160mΩ (VGS = 2.5V, ID = 0.5A)
- Typical RDS(on): 99mΩ (VGS = 8V)
- Gate Threshold Voltage: 0.65V to 1.10V
- Typical Gate Threshold Voltage: 0.85V
- Gate-Source Voltage Rating: 12V
- Typical Total Gate Charge (Qg): 0.92nC (VGS = 4.5V)
- Typical Gate-to-Drain Charge (Qgd): 0.075nC
- Typical Input Capacitance (Ciss): 150pF
- Maximum Power Dissipation: 500mW (Specified PCB Conditions)
- ESD Protection: Integrated Gate ESD Diode
- ESD Rating: Above 4kV HBM / 2kV CDM
- Operating Junction Temperature: -55°C to +150°C
- Package: 3-Terminal LGA / PICOSTAR (YJJ)
- Package Size: 0402
- Dimensions: 1.0 × 0.6 × 0.2mm
- Mounting Type: Surface Mount (SMD/SMT)
- Compliance: RoHS Compliant, Lead-Free, Halogen-Free
- Packaging: Tape & Reel
- Standard Reel Quantity: 3,000 Pieces
- Product Status: Active
Typical Applications:
- Battery-powered electronic devices
- Portable and handheld equipment
- Low-voltage load switching
- Power management and control circuits
- Mobile electronic devices
- Microcontroller-controlled switching
- Compact consumer electronics
- High-density PCB designs
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