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TI CSD16340Q3 25V N-Channel NexFET Power MOSFET 5.5mΩ VSON-8

Original price was: $0.67.Current price is: $0.60.

The TI CSD16340Q3 is a 25V N-channel NexFET power MOSFET featuring ultra-low on-resistance, low gate charge and logic-level operation. Optimized for 5V gate drive, it comes in a compact 8-pin VSON-CLIP package for synchronous buck converters and high-efficiency power conversion applications.

Availability: 100000 in stock

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SKU: CSD16340Q3 Category: Brand:

The Texas Instruments CSD16340Q3 is a high-performance 25V N-channel NexFET™ power MOSFET designed to minimize conduction and switching losses in high-efficiency power conversion systems. It is particularly optimized for 5V gate-drive applications and can also be characterized at lower gate voltages.

The device provides a maximum RDS(on) of 5.5mΩ at VGS = 4.5V and 7.8mΩ at VGS = 2.5V, enabling low conduction losses in high-current switching applications. Its typical gate threshold voltage is approximately 0.85V, supporting logic-level control.

With a typical total gate charge of only 6.5nC and gate-to-drain charge of approximately 1.2nC, the CSD16340Q3 helps reduce switching losses and gate-driver requirements in high-frequency DC/DC converters.

The MOSFET is avalanche rated and designed with low thermal resistance for reliable operation in demanding power applications. TI specifies a silicon-limited drain current of 21A at TC = 25°C, while actual usable current depends on PCB layout, thermal design and operating conditions.

The CSD16340Q3 is supplied in a compact 8-pin VSON-CLIP (DQG) package measuring approximately 3.3 × 3.3mm, making it well suited for space-constrained point-of-load power supplies in networking, telecom and computing equipment.

Key Specifications

  • Manufacturer: Texas Instruments / TI
  • Part Number: CSD16340Q3
  • Product Type: Power MOSFET
  • Technology: NexFET™
  • Channel Type: N-Channel
  • Configuration: Single
  • Drain-Source Voltage VDS: 25V
  • Gate-Source Voltage VGS: 10V
  • RDS(on): 5.5mΩ Max @ VGS = 4.5V
  • RDS(on): 7.8mΩ Max @ VGS = 2.5V
  • Typical Gate Threshold Voltage: 0.85V
  • Typical Total Gate Charge Qg: 6.5nC
  • Typical Qgd: 1.2nC
  • Silicon-Limited Drain Current: 21A @ TC = 25°C
  • Logic-Level Device: Yes
  • Optimized for 5V Gate Drive
  • Avalanche Rated
  • Low Thermal Resistance
  • Package: VSON-CLIP-8
  • Package Code: DQG
  • Package Size: 3.3 × 3.3mm
  • Operating Temperature: -55°C to +150°C
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel
  • RoHS Compliant
  • Halogen Free
  • Product Status: Active
  • Typical Applications: Point-of-load synchronous buck converters, control FETs, synchronous rectification, networking, telecom, computing and high-efficiency DC/DC power conversion

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