The BAS86-GS08 from Vishay is a single small-signal Schottky diode based on a metal-on-silicon Schottky barrier structure. An integrated PN-junction guard ring helps protect the device against excessive voltage and electrostatic-discharge-related stress.
The device is rated for 50V continuous reverse voltage and 200mA continuous forward current, with a repetitive peak forward-current rating of 500mA and maximum power dissipation of 200mW.
The BAS86 provides low forward voltage for low-level signal applications. Maximum VF is specified at 0.30V at 0.1mA, 0.38V at 1mA, 0.45V at 10mA, 0.60V at 30mA and 0.90V at 100mA.
Reverse characteristics include a minimum 50V breakdown voltage at 10µA and maximum leakage current of 5µA at 40V. Maximum diode capacitance is 8pF at 1V and 1MHz, while maximum reverse recovery time is 5ns, supporting fast small-signal switching applications.
The BAS86 is rated for an ambient operating temperature range of -65°C to +125°C, with a maximum junction temperature of 125°C and storage range of -65°C to +150°C. Maximum junction-to-ambient thermal resistance is 300K/W.
The exact BAS86-GS08 ordering option uses a MiniMELF (SOD-80) surface-mount package weighing approximately 31mg. The package measures approximately 3.3 to 3.7mm in length and 1.4 to 1.6mm in diameter. The GS08 code specifies 2500 devices on a 7-inch reel using 8mm tape.
Vishay recommends the device for applications requiring very low forward voltage, including MOS-device protection, steering, biasing, coupling and fast low-logic-level switching. BAS86 remains listed on Vishay’s current official product website with sample and purchasing links.
Key Specifications:
- Brand: Vishay
- Part Number: BAS86-GS08
- Base Part Number: BAS86
- Product Type: Small-Signal Schottky Diode
- Configuration: Single
- Technology: Metal-on-Silicon Schottky Barrier
- PN Junction Guard Ring: Yes
- Continuous Reverse Voltage: 50V
- Minimum Breakdown Voltage: 50V @ 10µA
- Continuous Forward Current: 200mA
- Repetitive Peak Forward Current: 500mA
- Maximum Power Dissipation: 200mW
- Maximum VF: 0.30V @ 0.1mA
- Maximum VF: 0.38V @ 1mA
- Maximum VF: 0.45V @ 10mA
- Maximum VF: 0.60V @ 30mA
- Maximum VF: 0.90V @ 100mA
- Maximum Reverse Leakage: 5µA @ 40V
- Maximum Diode Capacitance: 8pF @ 1V, 1MHz
- Maximum Reverse Recovery Time: 5ns
- Thermal Resistance RθJA: 300K/W
- Maximum Junction Temperature: 125°C
- Operating Temperature: -65°C to +125°C
- Storage Temperature: -65°C to +150°C
- Package: MiniMELF / SOD-80
- Body Length: Approx. 3.3 to 3.7mm
- Body Diameter: Approx. 1.4 to 1.6mm
- Weight: Approx. 31mg
- Cathode Marking: Black Band
- Mounting: SMD / SMT
- Packaging Code: GS08
- Packaging: 7-Inch Tape & Reel
- Tape Width: 8mm
- Reel Quantity: 2500 pcs.
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