The Vishay V30200C-E3/4W is a high-performance dual Schottky rectifier featuring advanced TMBS® (Trench MOS Barrier Schottky) technology, designed for efficient power rectification, high-frequency switching, and DC-DC power conversion applications. With a maximum repetitive reverse voltage of 200V and a total average forward rectified current rating of 30A, this device provides efficient power conversion in a TO-220AB through-hole package.
The V30200C-E3/4W incorporates two Schottky rectifier diodes in a common-cathode configuration, with each diode rated for 15A average forward current. Its trench MOS barrier structure helps reduce forward voltage drop and conduction losses, supporting high-efficiency operation in switching power supplies and power management circuits.
The device features a maximum forward voltage of 1.10V at 15A and 25°C, with a typical forward voltage of 0.648V at 15A and 125°C. Its low forward voltage characteristics help improve energy efficiency and reduce heat generation in properly designed power rectification circuits.
For demanding power applications, the V30200C-E3/4W supports a non-repetitive peak forward surge current of 250A per diode, a typical junction-to-case thermal resistance of 2.0°C/W per diode, and a maximum operating junction temperature of +150°C. Its TO-220AB package is suitable for through-hole PCB mounting and external heatsink attachment when required.
Featuring matte tin-plated terminals and RoHS-compliant construction, the device is suitable for high-frequency converters, switching power supplies, freewheeling circuits, OR-ing diode configurations, and reverse battery protection.
Key Specifications:
- Manufacturer: Vishay
- Part Number: V30200C-E3/4W
- Product Series: TMBS®
- Product Type: Dual Schottky Rectifier
- Rectifier Technology: Trench MOS Barrier Schottky
- Diode Configuration: Dual Common Cathode
- Number of Diodes: 2
- Maximum Repetitive Reverse Voltage (VRRM): 200V
- Average Forward Current (Per Device): 30A
- Average Forward Current (Per Diode): 15A
- Non-Repetitive Peak Surge Current (IFSM): 250A per Diode
- Maximum Forward Voltage (VF): 1.10V at IF = 15A, TA = 25°C
- Typical Forward Voltage: 0.648V at IF = 15A, TA = 125°C
- Maximum Reverse Leakage Current: 160µA at VR = 200V, TA = 25°C
- Non-Repetitive Avalanche Energy: 200mJ per Diode
- Voltage Rate of Change (dV/dt): 10,000V/µs
- Typical Junction-to-Case Thermal Resistance: 2.0°C/W per Diode
- Operating Junction Temperature: -40°C to +150°C
- Storage Temperature: -40°C to +150°C
- Package: TO-220AB (3-Pin)
- Mounting Type: Through Hole
- Terminal Finish: Matte Tin
- Compliance: RoHS Compliant (Manufacturer-Specified Exemptions)
- Product Grade: Commercial
- Packaging: Tube
- Standard Package Quantity: 50 Pieces per Tube
Typical Applications:
- High-frequency power converters
- Switching power supplies (SMPS)
- DC-DC converter circuits
- Freewheeling diode applications
- Power supply output rectification
- OR-ing diode circuits
- Reverse battery protection
- Industrial power electronics
- General-purpose high-voltage rectification
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