The FDP51N25 from onsemi is a high-voltage N-channel UniFET power MOSFET manufactured using planar-stripe and DMOS technology. It is optimized for reduced on-state resistance, improved switching performance, and high avalanche-energy capability in power-factor-correction, UPS, AC-DC power-supply, display-power, and lighting applications.
The device has a 250V drain-to-source voltage rating and supports 51A continuous drain current at a 25°C case temperature. Continuous current is rated at 30A when the case temperature reaches 100°C, while pulsed drain current is rated up to 204A. Practical current capability depends on switching frequency, safe operating area, heatsink performance, and junction temperature.
At VGS=10V and ID=25.5A, static drain-to-source on-resistance is 48mΩ typical and 60mΩ maximum. Gate-threshold voltage is specified from 3V to 5V; this value indicates the beginning of conduction rather than the voltage required for full enhancement.
Typical total gate charge is 55nC, with a specified maximum of 70nC. Typical gate-to-source and gate-to-drain charges are 16nC and 27nC, respectively. Typical input, output, and reverse-transfer capacitances are 2620pF, 530pF, and 63pF.
The FDP51N25 provides a 1111mJ single-pulse avalanche-energy rating and a 32mJ repetitive avalanche rating. Its intrinsic body diode supports 51A continuous and 204A pulsed current, with a maximum forward voltage of 1.4V and a typical reverse-recovery time of 178ns.
Maximum power dissipation is 320W at TC=25°C, maximum junction-to-case thermal resistance is 0.39°C/W, and the operating and storage junction-temperature range is −55°C to +150°C. The device is supplied in a three-lead TO-220 through-hole package with gate, drain, and source terminals.
Key Specifications
- Manufacturer: onsemi
- Manufacturer Part Number: FDP51N25
- Device Type: N-Channel Power MOSFET
- Technology Family: UniFET
- Configuration: Single
- Drain-to-Source Voltage: 250V
- Continuous Drain Current: 51A at TC=25°C
- Continuous Drain Current: 30A at TC=100°C
- Pulsed Drain Current: 204A
- Gate-to-Source Voltage: ±30V
- Typical On-Resistance: 48mΩ
- Maximum On-Resistance: 60mΩ
- On-Resistance Conditions: VGS=10V, ID=25.5A
- Gate-Threshold Voltage: 3V to 5V
- Typical Total Gate Charge: 55nC
- Maximum Total Gate Charge: 70nC
- Typical Gate-to-Source Charge: 16nC
- Typical Gate-to-Drain Charge: 27nC
- Typical Input Capacitance: 2620pF
- Typical Output Capacitance: 530pF
- Typical Reverse-Transfer Capacitance: 63pF
- Single-Pulse Avalanche Energy: 1111mJ
- Repetitive Avalanche Energy: 32mJ
- Maximum Power Dissipation: 320W
- Maximum Junction-to-Case Thermal Resistance: 0.39°C/W
- Body-Diode Maximum Forward Voltage: 1.4V
- Body-Diode Typical Reverse-Recovery Time: 178ns
- Operating and Storage Temperature: −55°C to +150°C
- Package: TO-220-3
- Mounting Type: Through-Hole
- Packaging: Tube
- Official Shipping Quantity: 1,000 Units
- Product Status: Active
Typical Applications
Suitable for uninterruptible power supplies, AC-DC switching power supplies, active power-factor-correction circuits, flat-panel-display power supplies, ATX computer power supplies, and electronic lighting equipment. Bus-voltage margin, gate-drive capability, switching loss, body-diode recovery, avalanche conditions, safe operating area, and heatsink performance should be verified in the final design.
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