The FGH40N60SMD from onsemi is a high-performance 600V Field Stop IGBT designed for power conversion and high-voltage switching applications. Based on onsemi’s second-generation Field Stop technology, the device combines low conduction loss, fast switching performance, and high current capability, making it suitable for efficient power electronic designs.
The device features a typical collector-emitter saturation voltage VCE(sat) of 1.9V at IC = 40A and VGE = 15V, helping reduce conduction losses in high-power circuits. It also provides high input impedance and a positive temperature coefficient, supporting stable operation and easier parallel connection of multiple devices.
FGH40N60SMD has a 600V collector-emitter voltage rating, supports 40A collector current at TC = 100°C, and can handle up to 80A at TC = 25°C under the datasheet maximum rating conditions. Pulsed collector current is rated up to 120A, while maximum power dissipation reaches 349W at TC = 25°C.
The device is supplied in a TO-247-3LD through-hole package and supports a junction temperature range of -55°C to +175°C. Typical applications include solar inverters, UPS systems, welding equipment, PFC circuits, telecom power supplies, energy storage systems, and other high-efficiency switching power applications.
Key Features
- Device type: Field Stop IGBT
- Collector-emitter voltage VCES: 600V
- Rated application current: 40A
- Collector current at TC = 25°C: 80A max
- Collector current at TC = 100°C: 40A max
- Pulsed collector current: 120A
- Typical VCE(sat): 1.9V @ IC = 40A
- Maximum VCE(sat): 2.5V @ IC = 40A
- Gate-emitter voltage: ±20V
- Fast switching performance
- High input impedance
- Positive temperature coefficient
- Maximum power dissipation: 349W
- Junction temperature: -55°C to +175°C
- Package: TO-247-3LD
- Mounting type: Through Hole
- Pb-free, halogen-free/BFR-free and RoHS compliant
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