FQA40N25 onsemi 250V 40A 70mΩ N-Channel QFET Power MOSFET TO-3P

The FQA40N25 from onsemi is an N-channel enhancement-mode QFET power MOSFET manufactured using planar-stripe and DMOS technology. It is optimized for low on-resistance, strong switching performance, and high avalanche-energy capability in switched-mode power supplies, active power-factor-correction circuits, and electronic lamp ballasts.

The device has a 250V drain-to-source voltage rating and supports 40A continuous drain current at a 25°C case temperature. Continuous current is rated at 25A when the case temperature reaches 100°C, while pulsed drain current is rated up to 160A. These ratings require appropriate thermal conditions and safe-operating-area derating.

At VGS=10V and ID=20A, the static drain-to-source on-resistance is 51mΩ typical and 70mΩ maximum. Gate-threshold voltage is specified from 3V to 5V; this threshold indicates the beginning of conduction and should not be treated as the required voltage for full enhancement.

Typical total gate charge is 85nC, with a specified maximum of 110nC. Typical input, output, and reverse-transfer capacitances are 3100pF, 620pF, and 70pF, respectively. Switching behavior depends on the external gate driver, gate resistance, drain voltage, and load current.

The FQA40N25 has an 800mJ single-pulse avalanche-energy rating and is 100% avalanche tested. Its intrinsic body diode supports 40A continuous and 160A pulsed current, with a maximum forward voltage of 1.5V and a typical reverse-recovery time of 220ns.

Maximum power dissipation is 280W at TC=25°C, maximum junction-to-case thermal resistance is 0.45°C/W, and the operating and storage junction-temperature range is −55°C to +150°C. The component is supplied in a three-lead TO-3P through-hole package with gate, drain, and source terminals.

Key Specifications:

• Manufacturer: onsemi
• Manufacturer Part Number: FQA40N25
• Device Type: N-Channel Power MOSFET
• Technology Family: QFET
• Drain-to-Source Voltage: 250V
• Continuous Drain Current: 40A at TC=25°C
• Continuous Drain Current: 25A at TC=100°C
• Pulsed Drain Current: 160A
• Gate-to-Source Voltage: ±30V
• Typical On-Resistance: 51mΩ
• Maximum On-Resistance: 70mΩ
• On-Resistance Test Conditions: VGS=10V, ID=20A
• Gate-Threshold Voltage: 3V to 5V
• Typical Total Gate Charge: 85nC
• Maximum Total Gate Charge: 110nC
• Typical Input Capacitance: 3100pF
• Typical Output Capacitance: 620pF
• Typical Reverse-Transfer Capacitance: 70pF
• Single-Pulse Avalanche Energy: 800mJ
• Maximum Power Dissipation: 280W
• Maximum Junction-to-Case Thermal Resistance: 0.45°C/W
• Body-Diode Maximum Forward Voltage: 1.5V
• Body-Diode Typical Reverse-Recovery Time: 220ns
• Operating and Storage Temperature: −55°C to +150°C
• Package: TO-3P-3L / EIAJ SC-65
• Terminal Configuration: Gate, Drain, Source
• Mounting Type: Through-Hole
• Environmental Classification: Lead-Free

Typical Applications:

Suitable for switched-mode power supplies, active power-factor-correction circuits, electronic lamp ballasts, and other high-voltage power-conversion circuits that meet the device’s electrical and thermal limits. Bus-voltage margin, gate-drive capability, switching losses, avalanche conditions, safe operating area, and heatsink performance should be verified in the final design.