The UCC21750QDWRQ1 from Texas Instruments is an automotive-grade reinforced isolated single-channel gate driver designed for high-voltage SiC MOSFETs and IGBTs. It uses SiO₂ capacitive isolation technology and provides 5700Vrms withstand isolation voltage with 1500Vrms working isolation voltage, making it suitable for automotive traction, onboard charging and high-voltage industrial power-conversion systems.
The device provides up to ±10A peak source and sink gate-drive current with split outputs, allowing designers to independently optimize power-switch turn-on and turn-off behavior. Its output stage supports up to 33V VDD-to-VEE drive voltage, while minimum common-mode transient immunity reaches 150V/ns, enabling robust operation in fast-switching high-voltage SiC and IGBT systems.
Integrated protection features include fast DESAT detection, overcurrent and short-circuit protection, fault reporting, a 4A internal active Miller clamp, and 400mA soft turn-off during fault events. DESAT protection response time is approximately 200ns, helping protect expensive power switches against destructive short-circuit conditions.
The UCC21750-Q1 also integrates an isolated analog-to-PWM sensing channel that can interface with NTCs, PTCs or thermal diodes for temperature monitoring, or measure high-voltage DC-link and phase voltages. Dedicated FLT, RDY and RST/EN functions provide fault indication, power-good status, fast enable/disable control and fault reset.
Dynamic performance includes approximately 90ns propagation delay in TI’s parametric table, with a specified maximum of 130ns, plus approximately 33ns rise time and 27ns fall time. The output-side UVLO threshold is typically 12V, while the input-side supply operates from 3V to 5.5V for convenient connection to automotive MCUs and controllers.
The specific UCC21750QDWRQ1 ordering option uses a 16-pin wide-body SOIC (DW) package measuring approximately 10.3 × 10.3mm, with creepage and clearance greater than 8mm. It is AEC-Q100 Grade 1 qualified, operates from -40°C to +125°C ambient, and is supplied in 2000-piece large tape-and-reel packaging. TI currently lists the part as ACTIVE.
Key Specifications:
- Brand: Texas Instruments / TI
- Part Number: UCC21750QDWRQ1
- Product Type: Reinforced Isolated Gate Driver
- Number of Channels: 1
- Isolation Rating: Reinforced
- Power Switch Support: SiC MOSFET / IGBT
- Withstand Isolation Voltage: 5700Vrms
- Working Isolation Voltage: 1500Vrms
- Peak Drive Current: ±10A
- Peak Source Current: 10A Typ
- Peak Sink Current: 10A Typ
- Maximum Output Drive Voltage: 33V
- Power Switch Voltage Support: Up to Approx. 2121Vpk
- Minimum CMTI: 150V/ns
- DESAT Protection: Yes
- DESAT Response Time: Approx. 200ns
- Active Miller Clamp: 4A
- Fault Soft Turn-Off: 400mA
- Short-Circuit Protection: Yes
- Overcurrent Detection: Yes
- Fault Reporting: Yes
- Power Good / RDY: Yes
- Isolated Analog Sensing: Yes
- Analog-Sense Output: PWM
- Temperature Sensing: NTC / PTC / Thermal Diode
- High-Voltage Sensing: DC-Link / Phase Voltage
- Output-Side UVLO: 12V Typ
- Input Supply Voltage: 3V to 5.5V
- Propagation Delay: 90ns Parametric / 130ns Max
- Rise Time: 33ns
- Fall Time: 27ns
- Input Noise-Pulse Rejection: <40ns
- Automotive Qualification: AEC-Q100 Grade 1
- Ambient Operating Temperature: -40°C to +125°C
- Maximum Junction Temperature: +150°C
- Package: SOIC-16 / DW
- Package Size: Approx. 10.3 × 10.3mm
- Creepage / Clearance: >8mm
- Packaging: Large Tape & Reel
- Reel Quantity: 2000 pcs
- RoHS Compliant: Yes
- REACH Compliant: Yes
- MSL: Level 3 / 260°C
- Product Status: ACTIVE.
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