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Toshiba 2SC1815-GR 50V 150mA Low-Noise NPN Bipolar Transistor TO-92

Original price was: $447.00.Current price is: $403.00.

Toshiba 2SC1815-GR is a 50V 150mA low-noise NPN transistor with 200–400 hFE, 80MHz transition frequency, and a TO-92 package for audio and general-purpose amplification.

Availability: 100000 in stock

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SKU: 2SC1815-GR/3000pcs Category: Brand:

The Toshiba 2SC1815-GR is a silicon NPN epitaxial bipolar transistor designed for audio-frequency general-purpose amplification and driver-stage amplifier applications. It provides a 50V collector-emitter voltage rating and supports up to 150mA collector current, making it suitable for low-power analog amplification and signal-processing circuits.

The GR suffix specifies the DC current-gain classification. At VCE = 6V and IC = 2mA, the GR grade provides an hFE range of 200 to 400. Its good current-gain linearity makes it well suited for audio preamplifiers, driver stages, and general small-signal amplification.

The device features a transition frequency of 80MHz, with collector output capacitance of 2.0pF typical and 3.5pF maximum. Under the specified conditions, typical noise figure is only 1dB at 1kHz, supporting low-noise analog and audio designs.

At IC = 100mA and IB = 10mA, collector-emitter saturation voltage is 0.1V typical and 0.25V maximum. Maximum collector power dissipation is 400mW, maximum junction temperature is 125°C, and the specified storage temperature range is -55°C to +125°C.

The 2SC1815-GR is housed in a standard TO-92 through-hole package, identified by Toshiba package code 2-5F1B. It is suitable for audio amplifiers, driver circuits, signal processing, and general-purpose switching and amplification applications.

Key Features:

  • Manufacturer: Toshiba
  • Part Number: 2SC1815-GR
  • Device Type: Bipolar Junction Transistor
  • Polarity: NPN
  • Technology: Silicon NPN Epitaxial
  • Collector-Emitter Voltage: 50V
  • Collector-Base Voltage: 60V
  • Emitter-Base Voltage: 5V
  • Maximum Collector Current: 150mA
  • Maximum Base Current: 50mA
  • GR Grade DC Gain hFE: 200 to 400
  • hFE Test Condition: VCE = 6V, IC = 2mA
  • Transition Frequency: 80MHz
  • Typical Output Capacitance: 2.0pF
  • Maximum Output Capacitance: 3.5pF
  • Typical Noise Figure: 1dB
  • Maximum VCE(sat): 0.25V
  • Maximum Power Dissipation: 400mW
  • Maximum Junction Temperature: 125°C
  • Storage Temperature: -55°C to +125°C
  • Package: TO-92 / Toshiba 2-5F1B
  • Mounting Type: Through Hole.

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